Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5425894 | Surface Science | 2006 | 10 Pages |
Abstract
The surface reconstructions of InxGa1âxAs alloys grown by molecular beam epitaxy on the (0Â 0Â 1) surfaces of GaAs and InAs have been studied by reflection high-energy electron diffraction and scanning tunnelling microscopy. A surface phase diagram is presented for the nominally strain-free alloy as a function of substrate temperature and alloy composition, and structural models for the commonly observed 3Ã reconstructions are discussed. Two new, electronically stable structural models are described that account for the transition of the InxGa1âxAs surface alloy from a c(4Â ÃÂ 4) to an asymmetric 3Ã reconstruction and that are fully consistent with all current experimental evidence.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
P.A. Bone, J.M. Ripalda, G.R. Bell, T.S. Jones,