Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5425911 | Surface Science | 2006 | 6 Pages |
In this work we have performed an ab initio total energy investigation of the Ge adsorption process on the Si-terminated SiC(0 0 0 1)-(3Ã3)R30° and (3 Ã 3) surfaces. We find that Ge adatoms lying on the topmost sites of the (3Ã3)R30° and (3 Ã 3) surfaces represent the energetically more stable configurations at the initial stage of the Ge adsorption on the SiC(0 0 0 1) surface. The Si â Ge substitutional adsorption processes have been examined as a function of the Si and Ge chemical potentials. Increasing the Ge coverage, we verify that the formation of Ge wetting layer on the (3Ã3)R30° surface, and Ge nanocluster on the (3 Ã 3) surface are the energetically more stable configurations, in accordance with recent experimental findings.