Article ID Journal Published Year Pages File Type
5426107 Surface Science 2007 8 Pages PDF
Abstract

The structure, growth and stoichiometry of heteroepitaxial Pr2O3 films on Si(1 1 1) were characterized by a combined RHEED, XRD, XPS and UPS study in view of future applications as a surface science model catalyst system. RHEED and XRD confirm the growth of a (0 0 0 1) oriented hexagonal Pr2O3 phase on Si(1 1 1), matching the surface symmetry by aligning the 〈101¯0〉 oxide in-plane direction along the 〈011¯〉 Si azimuth. After an initial nucleation stage RHEED growth oscillation studies point to a Frank-van der Merwe growth mode up to a thickness of approximately 12 nm. XPS and UPS prove that the initial growth of the Pr2O3 layer on Si up to ∼1 nm thickness is characterized by an interface reaction with Si. Nevertheless stoichiometric Pr2O3 films of high crystalline quality form on top of these Pr-silicate containing interlayers.

Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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