Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5426107 | Surface Science | 2007 | 8 Pages |
The structure, growth and stoichiometry of heteroepitaxial Pr2O3 films on Si(1 1 1) were characterized by a combined RHEED, XRD, XPS and UPS study in view of future applications as a surface science model catalyst system. RHEED and XRD confirm the growth of a (0 0 0 1) oriented hexagonal Pr2O3 phase on Si(1 1 1), matching the surface symmetry by aligning the ã101¯0ã oxide in-plane direction along the ã011¯ã Si azimuth. After an initial nucleation stage RHEED growth oscillation studies point to a Frank-van der Merwe growth mode up to a thickness of approximately 12 nm. XPS and UPS prove that the initial growth of the Pr2O3 layer on Si up to â¼1 nm thickness is characterized by an interface reaction with Si. Nevertheless stoichiometric Pr2O3 films of high crystalline quality form on top of these Pr-silicate containing interlayers.