Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5426416 | Surface Science | 2006 | 5 Pages |
Abstract
We present our investigation on the early stage of the photon induced desorption of oxide nanostructures grown on GaAs/AlAs/GaAs heterostructures. The oxide structures were fabricated by local anodic oxidation performed by means of an atomic force microscope. We observed that after a first rapid evolution in which a thick layer of heterogeneous material is removed, the oxide composition remains almost constant. These results support our model in which the oxidation process on a layered material resembles a melting process and produces a mixed material whose composition is the average of the initial one.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
M. Lazzarino, G. Mori, L. Sorba, D. Ercolani, G. Biasiol, S. Heun, A. Locatelli,