Article ID Journal Published Year Pages File Type
5426420 Surface Science 2006 5 Pages PDF
Abstract

The erosion of target materials with energetic ions can lead to the formation of patterns on the surface. During low-energy (⩽2000 eV) noble gas (Ne+, Ar+, Kr+, Xe+) ion beam erosion of silicon surfaces dot patterns evolve on the surface. Dot structures form at oblique ion incidence of 75° with respect to surface normal, with simultaneous sample rotation, at room temperature. The lateral ordering of dots increases while the dot size remains constant with ion fluence, leading to very well ordered dot patterns for prolonged sputtering. Depending on ion beam parameters, dot nanostructures have a mean size from 25 nm up to 50 nm, and a mean height up to 15 nm. The formation of dot patterns depends on the ion/target mass ratio and on the ion energy. The temporal evolution and the lateral ordering of these nanostructures is studied using scanning force microscopy (AFM).

Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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