| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5426432 | Surface Science | 2006 | 4 Pages |
Abstract
The metal-insulator transition observed in the In/Si(1Â 1Â 1)-4Â ÃÂ 1 reconstruction is studied by means of ab initio calculations of a simplified model of the surface. Different surface bands are identified and classified according to their origin and their response to several structural distortions. We support the, recently proposed [C. González, J. Ortega, F. Flores, New J. Phys. 7 (2005) 100], combination of a shear and a Peierls distortions as the origin of the metal-insulator transition. Our results also seem to favor an electronic driving force for the transition.
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Authors
S. Riikonen, A. Ayuela, D. Sánchez-Portal,