Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5426457 | Surface Science | 2006 | 5 Pages |
The growth and the crystalline and electronic structure of Ni deposited on single crystalline Cu(1Â 1Â 1) were studied by scanning tunnelling microscopy (STM), grazing incidence X-ray diffraction (GIXD) and angle-resolved photoemission spectroscopy (ARPES). In the early stages of growth monoatomic-high flat Ni islands, partially covered by Cu migrating from the surface, are observed. Starting from a pseudomorphic epitaxial relationship the in-plane lattice parameter progressively relaxes with increasing coverage. For a 20 monolayer (ML) thick deposit the in-plane lattice parameter is still found halfway between the bulk Ni and Cu lattice parameters. ARPES data also rule out the layer-by-layer growth and provide the values of the Ni exchange splitting.