| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5426485 | Surface Science | 2007 | 4 Pages |
Abstract
The energetic stability and the equilibrium geometry of Ge adsorption on the Si(0Â 0Â 1) surface covered with Bi nanolines were examined by ab initio total energy calculations. We find that there is an energetic preference of Ge atoms lying on the Si(0Â 0Â 1) terraces, forming Sidown-Geup mixed dimers. Further investigations reveal a repulsive interaction between the mixed dimers and the Bi nanolines, suggesting that the formation of Sidown-Geup dimers can be tailored by the presence of the Bi nanolines.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
R.H. Miwa, G.P. Srivastava,