Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5426502 | Surface Science | 2007 | 4 Pages |
Abstract
Using atomic force microscope (AFM) tip, local large-area oxide bumps were induced on a native SiO2 layer applied with a static 10Â V in an ambient surrounding. It can be seen in the backscattered electron (BE) images that the oxide bumps were SiOx layer, not the native SiO2 layer. Also, the spectra of energy dispersive X-ray spectrometer (EDS) displayed that the oxide bumps contained oxygen more than did the native SiO2 layer, indicating that the O/Si ratio of the oxide bump is greater than two. A comparison of the growth rates of the point oxide protrusions on the oxide bumps and on the native SiO2, can be used to directly determined the composition stoichiometry (the O/Si ratio (=x)) of the oxide bumps.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Yo-Shan Lu, Hsin-I Wu, Sheng Yun Wu, Yuan-Ron Ma,