Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5426540 | Surface Science | 2007 | 5 Pages |
Abstract
This study investigated the dynamics of copper atoms adsorbed on Si(1Â 1Â 1)-7Â ÃÂ 7 surfaces between 300Â K and 623Â K using a variable-temperature scanning tunneling microscope (STM). The diffusion behavior of copper clusters containing up to â¼6 atoms into a particular half unit cell of the 7Â ÃÂ 7 reconstructed Si(1Â 1Â 1) surface was considered. The movements and the formation of copper clusters were tracked in detail. The activation energies and pre-exponential factors for various diffusion paths were estimated. Finally, the Cu-etching-Si process and the quasi-5Â ÃÂ 5 incommensurated phase of Cu/Si islands were discussed.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Mon-Shu Ho, I-Wu Wang, Chih-Chuan Su,