Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5426697 | Surface Science | 2006 | 4 Pages |
Abstract
Ordered and disordered InGaP(0Â 0Â 1) films were grown by metalorganic vapor-phase epitaxy and studied by low energy electron diffraction, reflectance difference spectroscopy, and X-ray photoemission spectroscopy. Both alloy surfaces were covered with a monolayer of buckled phosphorus dimers, where half of the phosphorus atoms were terminated with hydrogen. Ordered InGaP(0Â 0Â 1) appeared indium rich, and exhibited a reflectance difference spectrum like that of InP(0Â 0Â 1). These results support a model whereby the strain energy on the ordered InGaP surface is reduced by aligning the group III atoms in alternating [1Â 1Â 0] rows, with the indium and gallium bonding to the buckled-down and buckled-up phosphorus atoms, respectively.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
S.F. Cheng, Y. Sun, D.C. Law, S.B. Visbeck, R.F. Hicks,