Fabrication of nanostructures by selective growth of C60 and Si on Si(1 1 1) substrate

Using two types of selective growth, selective C60 growth and selective Si growth, on a common Si(1 1 1) substrate, an array of C60 nanoribbons with controlled values of width and thickness is fabricated. On a surface that has Si(1 1 1)√3 × √3R30°-Ag (referred to as Si(1 1 1)√3-Ag hereafter) and bare Si(1 1 1) regions at the same time, the preferential growth of C60 multilayered film is recognized on the Si(1 1 1)√3-Ag region. The growth of Si selectively occurs on a bare Si(1 1 1) region if the substrate surface has C60-adsorbed and bare Si(1 1 1) regions at the same time. As a demonstration of the use of these selective growths, we fabricate an array of well-isolated C60 nanoribbons, which show a well-ordered molecular arrangement and have sizes of about 40 nm in widths and 3-4 nm in thicknesses.