Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5426782 | Surface Science | 2006 | 6 Pages |
Abstract
Au island nucleation and growth on a Si(1 1 1) 7 Ã 7 vicinal surface was studied by means of scanning tunneling microscopy. The surface was prepared to have a regular array of step bunches. Growth temperature and Au coverage were varied in the 255-430 °C substrate temperature range and from 1 to 7 monolayers, respectively. Two kinds of islands are observed on the surface: Au-Si reconstructed islands on the terraces and three-dimensional (3D) islands along the step bunches. Focusing on the latter, the dependence of island density, size and position on substrate temperature and on Au coverage is investigated. At 340 °C and above, hemispherical 3D islands nucleate systematically on the step edges.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
A. Rota, A. Martinez-Gil, G. Agnus, E. Moyen, T. Maroutian, B. Bartenlian, R. Mégy, M. Hanbücken, P. Beauvillain,