| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5426792 | Surface Science | 2006 | 7 Pages |
Abstract
One-dimensional Ce nanowires have been grown on a single-domain vicinal Si(1 0 0) surface. The growth mode, including the structural and electronic properties as a function of the substrate temperature and Ce coverage, was studied using scanning tunneling microscopy and scanning tunneling spectroscopy. The results show the formation of Ce nanowires along the step edges on the vicinal Si(1 0 0) substrate at 580 °C.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Hangil Lee, Dohyun Lee, Do Kyung Lim, Sehun Kim, Chanyong Hwang,