Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5426813 | Surface Science | 2006 | 5 Pages |
Abstract
Nucleation, growth and sintering of Pd deposited on an ultra-thin silica film were studied by scanning tunneling microscopy and infrared reflection absorption spectroscopy. No preferential nucleation of Pd on the silica surface was observed both at 90 and 300Â K deposition. When adsorbed on Pd clusters formed at 90Â K, CO causes a strong sintering effect even at this temperature. The results are rationalized on the basis of a high mobility of Pd carbonyl-like species on the silica film. At a given Pd coverage, the extent of CO induced sintering cannot be achieved by annealing in vacuum. In addition, vacuum sintering, which commences above 700Â K, goes simultaneously with interdiffusion of Pd and support.
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Authors
J.-L. Lu, S. Kaya, J. Weissenrieder, H.-J. Gao, S. Shaikhutdinov, H.-J. Freund,