Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5426840 | Surface Science | 2006 | 6 Pages |
Abstract
SiGe islands grown by deposition of 10 monolayers of Ge on Si(0 0 1) at 740 °C were investigated by using a combination of selective wet chemical etching and atomic force microscopy. The used etchant, a solution consisting of ammonium hydroxide and hydrogen peroxide, shows a high selectivity of Ge over SixGe1âx and is characterized by relatively slow etching rates for Si-rich alloys. By performing successive etching experiments on the same sample area, we are able to gain a deeper insight into the lateral displacement the islands undergo during post growth annealing.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
G. Katsaros, A. Rastelli, M. Stoffel, G. Isella, H. von Känel, A.M. Bittner, J. Tersoff, U. Denker, O.G. Schmidt, G. Costantini, K. Kern,