Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5426880 | Surface Science | 2006 | 5 Pages |
Abstract
Growth of epitaxial SrTiO3 (STO) films has been examined on H-terminated Si(1 1 1) with SrO buffer layers. The epitaxial SrO buffer layers have reduced stress on H-terminated Si substrates. On the SrO buffer layers, the STO films grow epitaxially with triple domains at low temperature. Each STO domain has equivalent epitaxial relationship to SrO buffer layers, STO(1 1 0)â¥SrO(1 1 1) and STO[001]â¥SrO[11¯0].
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Y. Machida, H. Asaoka, H. Yamamoto, S. Shamoto,