Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5426908 | Surface Science | 2006 | 5 Pages |
The electronic structure of Si(1Â 1Â 1)-(6Â ÃÂ 6)Au surface covered with submonolayer amount of Pb is investigated using scanning tunneling spectroscopy. Already in small islands of Pb with thickness of 1Â ML Pb(1Â 1Â 1) and with the diameter of only about 2Â nm we detected the quantized electronic state with energy 0.55Â eV below the Fermi level. Similarly, the I(V) characteristics made for the Si(1Â 1Â 1)-(6Â ÃÂ 6)Au surface reveal a localized energy state 0.3Â eV below the Fermi level. These energies result from fitting of the theoretical curves to the experimental data. The calculations are based on tight binding Hubbard model. The theoretical calculations clearly show prominent modification of the I(V) curve due to variation of electronic and topographic properties of the STM tip apex.