Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5429110 | Journal of Quantitative Spectroscopy and Radiative Transfer | 2012 | 6 Pages |
Thanks to its exceptional physical and electronic properties, diamond is an attractive material for electronic devices working at high temperature and in harsh chemical environment. Its use as a semiconducting material for electronics is related to the possibility of doping it in order to control its conductivity. Semiconducting p-type diamond films can be grown when boron is introduced into the film. In this work, boron-doped (B-doped) homoepitaxial diamond films are grown by Microwave Plasma Enhanced Chemical Vapor Deposition. Raman and electrical characterizations are carried out on the films as a function of boron doping level. As the boron content increases, we observe systematic modifications in the Raman spectra of single-crystal diamonds. A significant change in the lineshape of the first-order Raman peak, as well as a wide and structured signal at lower wavenumbers, appears simultaneously in samples grown with higher boron content. A single crystal diamond Schottky diode based on a metal/intrinsic/p-type diamond junction is analysed.
⺠B-doped homoepitaxial diamond films are grown by MPECVD. ⺠Raman and electrical characterizations are carried out on films as a function of boron doping level. ⺠Single crystal diamond Schottky diode based on a metal/intrinsic/p-type diamond junction are analysed.