| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5432296 | Carbon | 2017 | 6 Pages |
Abstract
Van der Waals epitaxy growth of two-dimensional materials promise controllable fabrication of novel artificial heterostructures. Here, we report molecular beam epitaxy growth of continuous molybdenum ditelluride (MoTe2) films on graphene substrates with good stoichiometry in both 2H and 1Tâ² phases. Post-growth annealing reveal phase transition suppressed in Te-rich atmosphere, through in-situ scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy. Our results suggest a new route to fabricate atomically ultrathin MoTe2 lateral heterophase homojunctions, showing potential applications in future lateral thin-film transistors.
Graphical abstractDownload high-res image (410KB)Download full-size image
Related Topics
Physical Sciences and Engineering
Energy
Energy (General)
Authors
Yayun Yu, Guang Wang, Shiqiao Qin, Nannan Wu, Zhenyu Wang, Ke He, Xue-Ao Zhang,