Influence of bias on the electronic structure and electrical conductivity and heat capacity of graphene and boron nitride multilayers

•The electronic structure of BN/G/BN multilayer is investigated by tight binding.•The band gap is affected by electric field.•The electrical conductivity is insensitive to the stacking types.

The electronic structure, electrical conductivity, heat capacity and thermal conductivity of BN and BN/graphene/BN with three and five layers are investigated using the tight binding approximation and Green's function method. The BN/graphene/BN trilayers show narrow band gap unlike to BN trilayers where which have wide band gap. The energy gap of BN trilayers decreases linearly with electric field unlike to the BN/graphene/BN trilayers. The magnitude of changes in the band gap for BN trilayers are much higher than the BN/graphene/BN trilayers. The electrical conductivity, heat capacity and thermal conductivity are zero for BN trilayers and it increases with temperature until reaches maximum value then decreases. The electrical conductivity of BN/graphene bilayers is larger than BN bilayers. For all cases, the heat capacity has a Schottky anomalies.