| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5435748 | Acta Materialia | 2017 | 9 Pages |
Abstract
Two dimensional phase field simulations have been performed to study the influence of the growth kinetics and the surface energy on the growth behaviour of grains during solidification of Si. In particular, we studied the groove between two grains as recently observed by in situ observation [1]. Furthermore, we performed computations for different Σ boundaries and discuss the interplay between equilibrium of interfacial energies and growth kinetics.
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Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
W. Miller, A. Popescu,