Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5437511 | Ceramics International | 2017 | 14 Pages |
Abstract
Pure and erbium doped (1, 2, 3 and 5Â at%) Barium zirconate (BZE) thin films have been deposited on Si (0 0 1) substrate via pulsed laser deposition using 100Â mJ Nd: YAG laser operated at second harmonics (532Â nm). Er doping significantly affects the surface morphology, microstructure and optical properties of grown thin films. All the films exhibit cubic BaZrO3 structure and are polycrystalline in nature as extracted from XRD data. The optical band gap energies (3.75-3.63Â eV) of doped (1, 2, 3, and 5Â at%) BZE thin films are found to be less than that of pure BZO film (4.03Â eV). PL spectra, excited at 328Â nm, mainly consist of violet-blue (412Â nm) and green (523-543Â nm) emissions for all the doped films. The green emission increases with the increase in Er doping upto 3Â at% and then concentration quenching effect appears at 5Â at%. It is noted that the relative intensity of PL emission and the optical band gap can be tuned by varying Er concentration to alter the properties of the phosphor. The emission peaks in photoluminescence spectra makes the Er: BZO films potential candidates to be used in optoelectronic devices such as light emitting diodes (LEDs).
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Shariqa Hassan Butt, M.S. Rafique, Shazia Bashir, Usman Ilyas, K. Siraj, M.S. Awan, Khaliq Mehmood, M. Rafique, Amina Afzal,