Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5437539 | Ceramics International | 2017 | 28 Pages |
Abstract
Ti-doped ZnO (TZO) films were grown by radio frequency (RF) magnetron sputtering using a Ti-doped ZnO ceramic target in an Ar+H2 atmosphere at room temperature. Both the experimental and theoretical methods were employed to investigate the effect of H in TZO films. As the H2 flow rate increased, the surface morphology changed from pyramid-like features to a crater-like topography and the root-mean-square (RMS) roughness increased. The crystal quality was found to deteriorate at first but subsequently improved at an optimum doping ratio. A resistivity of 7.97Ã10â4 Ω cm and an average transmittance of more than 83% in the 400-1100 nm range were obtained with an optimal H2 flow rate of 1.2 sccm. Results of theoretical calculations show that the H dopant behaves as a shallow donor in the TZO films. The doping position of H is located in a BC ⥠configuration at the center of the Zn-O bond, in which the O atom bonded to a substituted Ti atom parallel to the c axis. The charge carrier bands shifted from Ti 3d and O 2p orbitals in the TZO film to Ti 3d and H 1 s orbitals in H and Ti co-doped ZnO films.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Yanfeng Wang, Jianmin Song, Wei Zheng, Hailin Pei, Xiaohe Wang, Dan Wang, Guozhen Niu, Qinggong Song, Fu Yang, Jingyu Nan,