Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5437564 | Ceramics International | 2017 | 5 Pages |
Abstract
The effects of yttrium (Y) additions (x=0, 0.05, 0.1, and 0.2) on the microstructure, chemical structure, and electrical properties of YxInSnOy (YITO) thin films, prepared using a sol-gel process were examined. The transmission electron microscopy (TEM) observations showed that the undoped InSnO (ITO) film consisted of an amorphous structure with local crystalline domains on the film surface, whereas the Y additions (x=0.05, 0.1, and 0.2) to ITO suppressed the formation of the crystalline phase. X-ray photoelectron spectroscopy (XPS) analysis showed that the Y content decreased the concentration of oxygen vacancies owing to the strong incorporation of Y with oxygen. As a result of the Y incorporation, the carrier concentration of ITO films decreased. The saturation mobility (μsat), the on-off ratios (Ion/off), and the sub-threshold swing (S.S) of YITO films were 1.1 cm2 Vâ1 sâ1, ~106, and ~0.5 V decadeâ1, respectively, which are comparable with 1.7 cm2 Vâ1 sâ1, ~105, and ~1.17 V decadeâ1 of ITO film. Additionally, the initial threshold voltage (VTH) was positive shift with increased of Y addition and VTH shift (ÎVTH) under the positive bias stress (PBS) results decreased by Y addition.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Jun Hyuk Choi, Chang Min Lee, Seung Muk Lee, Geun Chul Park, Byung-Hyuk Jun, Jinho Joo, Jun Hyung Lim,