Preparation and characterization of materials in the system xCuO-(50-x) CdO-50B2O3

New glassy materials in the system xCuO-(50-x) CdO-50B2O3 were prepared by a melting-quench technique. Their UV-vis, FTIR, electrical, dielectric, SEM, XRD patterns and density properties were investigated. SEM and XRD studies confirmed their amorphous nature and the presence of crystalline phases in the sample with 50 mol% CuO. Replacing CdO with increasing concentrations of CuO decreased the density and increased the molar volume. Optical reflectance spectra revealed the presence of Cu2+ ions in octahedral coordination, as well as the presence of Cu1+ and Cuº in the samples with greater than 30% CuO. FTIR measurements confirmed the conversion of BO4 units to BO3 units with increasing CuO contents. The conduction in the CuO-containing samples increased as the CdO was completely replaced by CuO. The CuO-containing samples exhibited a slight increase in the ɛʹ values with increasing temperature and a decrease with increasing frequency. The ɛʹ values gradually increase upon replacing CdO with up to 40 mol% CuO. An abrupt increase in ɛʹ was recorded for the sample with 50 mol% CuO, particularly at high temperature. The latter sample showed an εʹ value of 927at 100 Hz and 298 K. Prepared samples with high ɛʹ values are promising candidates for capacitor materials in electronic devices.