Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5438069 | Ceramics International | 2017 | 7 Pages |
Abstract
Structural and electrical properties of ZnO:Al0.01P0.04 thin films were investigated with respect to the growth temperature of the ZnO buffer layers deposited by RF magnetron sputtering. The ZnO buffer layers on c-plane sapphires showed three different types of in-plane orientation relationships between ZnO and Al2O3 at different growth temperatures: ZnO[101Ì
0] // Al2O3[101Ì
0] at 200 °C, a mixture of ZnO[101Ì
0] // Al2O3[101Ì
0] and ZnO[101Ì
0] // Al2O3[112Ì
0] at 300 °C, and ZnO[101Ì
0] // Al2O3[112Ì
0] at 600 °C. The in-plane orientation of the ZnO:Al0.01P0.04 thin film followed the orientation of the ZnO buffer layer regardless of its growth temperature. The ZnO:Al0.01P0.04 film grown on a ZnO buffer layer deposited at 600 °C had a carrier concentration of 1.18 à 1016 cmâ3, mobility of 7.16 à 10° cm2/(V s), and resistivity of 7.36 à 101 Ω cm, indicating p-type characteristics.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Seunghak Shin, Changhun Kim, Jung-A. Lee, Young-Woo Heo, Joon-Hyung Lee, Jeong-Joo Kim,