| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5438222 | Ceramics International | 2017 | 7 Pages |
Abstract
Nanoparticles of the p-type semiconductor nickel sulfide are grown on a highly aligned n-type TiO2 film. Using XRD, XPS, EDS, UV-Vis diffuse reflectance spectroscopy, photoluminescence, photocurrent density, and CO2-TPD, the physicochemical characteristics of the p-n heterojunction NiS-sensitized TiO2 films are investigated. The highest photocurrent is obtained for the optimized 0.10Â M NiS-sensitized TiO2 film, which resulted in eventually decreasing the electron-hole recombination during CO2 photoreduction. The NiS-sensitized TiO2 film exhibits superior photocatalytic behavior compared to that of a pure TiO2 film. A model for investigating the catalytic activity of the NiS-sensitized TiO2 film for CO2 photoreduction is proposed.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Jae Hyung Lee, Sung-Il Kim, Sun-Min Park, Misook Kang,