Article ID Journal Published Year Pages File Type
5438360 Ceramics International 2017 6 Pages PDF
Abstract
Aluminum oxide (AlOx) thin films were synthesized by mist-chemical vapor deposition (mist-CVD) using aluminum acetylacetonate (Al(acac)3) dissolved in an aqueous solvent mixture of acetone and water. Nitrogen gas was used to purge the precursor solution and growth rates between 7.5-13.3 nm/min were achieved at substrate temperatures of 250-350 °C. The AlOx layers deposited at temperatures below 350 °C exhibit 3-5 at% residual carbon levels, however those grown at 350 °C exhibit only 1-2 at% carbon impurity. Reasonable dielectric properties were obtained in the latter, with a dielectric constant (κ) of ~ 7.0, breakdown field of ~ 9 MV/cm and relatively low leakage current density of ~ 8.3×10−10 A/cm2.
Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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