Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5438601 | Ceramics International | 2017 | 20 Pages |
Abstract
This study examined the effects of controlled Zr doping on the electrical properties of inkjet-printed zinc-tin oxide (ZTO) thin-film transistors (TFTs). In contrast to previous reports, below a certain doping concentration, improved electrical properties were obtained due to the effectively suppressed oxygen vacancies, reduced trapped electrons, and controlled carrier concentrations. The 0.0025Â M Zr-doped inkjet-printed ZTO TFTs showed higher mobility, higher on-to-off current ratio, lower threshold voltage, and lower subthreshold slope of 6.43Â cm2/VÂ s, 3.72Ã108, 3.35Â V, and 0.53Â V/dec, respectively, compared to the un-doped TFTs. The bias stability of the Zr-doped inkjet-printed ZTO TFT was also improved.
Keywords
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Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Hunho Kim, Woon-Seop Choi,