Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5438980 | Ceramics International | 2017 | 35 Pages |
Abstract
A Ti-doped Y2O3(Y2Ti2O5) dielectric on polycrystalline silicon followed by rapid thermal annealing results in improved characteristics including a higher effective dielectric constant, higher breakdown electric field, lower electron trapping rate, and larger charge-to-breakdown when compared with Y2O3. The performance of high-k Y2O3 and Y2Ti2O5 dielectrics were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), capacitance-voltage, and current density-voltage. Incorporating Ti into the Y2O3 dielectric imparts improvements in the structural and electrical performance of the material. The Y2Ti2O5 dielectric with 800 °C annealing treatment has the best performance among all the samples tested.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Ming Ling Lee, Chyuan Haur Kao, Hsiang Chen, Chan Yu Lin, Yu Teng Chung, Kow Ming Chang,