| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5440217 | Journal of the European Ceramic Society | 2018 | 33 Pages |
Abstract
High temperature compressive creep of SiC-HfB2 UHTCs up to 2000 °C has been studied. Microstructural analysis after deformation reveals formation of new phases in the Hf-B-Si and Hf-B-Si-C systems, which are responsible for the poor creep resistance. RE oxide additions have a negative effect reducing the creep resistance of SiC-HfB2 UHTCs. A simplistic analysis for the required creep resistance is described, indicating that only SiC-HfB2 UHTCs could withstand re-entry conditions for 5 min in a single use. However, RE oxide addition to SiC-HfB2 UHTCs does not provide the required creep resistance for them to be candidate materials for hypersonic applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
E. Zapata-Solvas, D. Gómez-GarcÃa, A. DomÃnguez-RodrÃguez, W.E. Lee,