A novel ultra-light reticulated SiC foam with hollow skeleton

In this study, ultra-light reticulated SiC foam (SF) with hollow skeleton was prepared by applying chemical vapor deposition technique to deposit SiC layer on carbon foam (CF) skeleton, followed by high temperature oxidation of CF. The microstructures of materials were examined by SEM and SF samples show higher specific surface area (349 ± 13 m2/g), initial oxidation temperature (1000 °C) and compressive stress (0.6 MPa) than CF. The compression test results show that the compressive strength of SF increased with the CVD time. While the compressive strength decreased significantly, when the CVD temperature reached 1200 °C. Keeping in view superior observed related characteristics, the prepared SF with special structures was anticipated to be suitable for catalysis, energy storage or membrane science.