Solubility limit of Si in YAG at 1700 °C in vacuum

Measurement of the solubility limit of Si in yttrium aluminum garnet (YAG-Y3Al5O12) is crucial for understanding the mechanisms by which Si influences grain boundary mobility, and the mechanisms by which grain boundaries migrate. In the present work, the solubility limit of Si in YAG at 1700 °C in vacuum (5 × 10−6 Torr), which are the most common sintering temperature and environment for YAG, was measured for the first time. Measurements were conducted by wavelength dispersive spectroscopy (WDS), using polished YAG specimens with 3700 ppm Si (0.8 wt% SiO2). Si content to ensure saturation with Si. The accuracy of the WDS result was confirmed by using a series of doped specimens and by comparing to inductively coupled plasma mass spectrometry ICP-MS results. The results indicate that the solubility limit of Si in YAG at 1700 °C (5 × 10−6 Torr), is 980 ± 60 ppm. The measured Si solubility was found to significantly depend on the cooling rate, where for furnace cooled specimens the measured Si solubility was 650 ± 60 ppm. A second phase in triple junction was repeatedly observed when higher content of Si was used, confirming this work results.