Compositional dependencies in the vibrational properties of amorphous Ge-As-Se and Ge-Sb-Te chalcogenide alloys studied by Raman spectroscopy

This work is focused on the compositional dependencies in the Raman spectra of amorphous Ge-As-Se and Ge-Sb-Te chalcogenides with the systematic increase of the Ge-content. Studied Ge-As-Se and Ge-Sb-Te chalcogenides are promising for applications in the photonics, optical, and electronic data storages. Gaussians used to fit the obtained Raman spectra were attributed to the vibrations of the structural units in Ge-Sb-Te and Ge-As-Se samples. Systematic compositional dependencies of the intensities of the characteristic Raman bands correlate with evolution of concentration of the different structural units in Ge-Sb-Te and Ge-As-Se alloys along the studied compositional lines. Obtained compositional trends in the intensities of Raman bands may enable one to predict vibrational properties of other amorphous Ge-Sb-Te and Ge-As-Se chalcogenides.