Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5442521 | Optical Materials | 2017 | 8 Pages |
Abstract
Indium Zinc Oxide (InZnO) thin films were deposited on pre-cleaned glass substrate by thermal evaporation technique. X-ray diffraction pattern revealed mixed phase with polycrystalline structure. The uniform distribution of spherical shape grains over entire film surface was observed through scanning electron microscopy. Optical study revealed the higher transmittance (80%) and wide band gap energy (3.46 and 3.49Â eV). Low resistivity, high conductivity and low activation energy were obtained from Four Point Probe method. Dark and illuminated light on 100Â nm film showed better photo sensitivity than 200Â nm film. The observed uniform surface morphology, higher transmittance, wide band gap energy, low resistivity, high conductivity and good photoconductivity properties indicated that these thermally evaporated InZnO thin films could be used as TCOs instead of ITO in electronic and opto-electronic devices in future.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Sathish Sugumaran, Chandar Shekar Bellan, Dinesh Bheeman,