Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5442849 | Optical Materials | 2017 | 6 Pages |
Abstract
A novel blue InGaN-chip-based red-emitting phosphor Pr3+: LaBMO6 (MÂ =Â W, Mo) in pure phase were synthesized via conventional solid-state reaction in air and the photoluminescence properties of the phosphor were investigated for the application in white LEDs. The as-synthesized phosphors were characterized by the X-ray diffraction; diffuse reflection spectra, photoluminescence excitation and emission spectra, the Commission International de L'Eclairage (CIE) chromaticity coordinates and temperature-dependent emission spectra. Orangish red emission band around 575-625Â nm was observed in Pr3+-doped LaBMO6 (MÂ =Â W, Mo) upon 445Â nm excitation. Fluorescence concentration quenching in Pr3+-doped LaBMoO6 were observed and the critical distance between Pr3+ ions for energy transfer was calculated to be 8.369Â nm. The CIE chromaticity coordinates of Pr3+-doped LaBMoO6 were located in the red spectral region and the temperature-dependent luminescence spectra indicated that Pr3+-doped LaBMoO6 show good thermal stability. All results demonstrated the developed Pr3+-doped LaBMO6 (MÂ =Â W, Mo) was a novel red phosphor.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
F.B. Xiong, H.F. Lin, Z. Ma, Y.P. Wang, H.Y. Lin, X.G. Meng, H.X. Shen, W.Z. Zhu,