Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5442976 | Optical Materials | 2017 | 4 Pages |
Abstract
Previously, we demonstrated that the Na-flux coalescence growth technique had high potential for the fabrication of large-diameter, high-quality GaN crystals. This present study investigates the relation between the flux composition (Ga/Na) and void formation in GaN crystals grown by this technique. It was found that void formation decreases with a decrease in the Ga composition of the flux and that stable coalescence with no voids at the GaN grain boundaries occurred for a Ga composition of 15Â mol%. Band-edge emission peaks were clearly observed for a crystal grown at 15Â mol% Ga composition, while other peaks were hardly observed.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Masatomo Honjo, Masayuki Imanishi, Hiroki Imabayashi, Kosuke Nakamura, Kosuke Murakami, Daisuke Matsuo, Mihoko Maruyama, Mamoru Imade, Masashi Yoshimura, Yusuke Mori,