Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5443093 | Optical Materials | 2016 | 4 Pages |
Abstract
Ga1.8Sn0.2O3 thin films were deposited on c-plane Al2O3 (0001) substrates by laser molecular beam epitaxy technology. Well crystallized (002) oriented É-phase Ga1.8Sn0.2O3 thin films were obtained at the substrate temperature above 750 °C and the oxygen partial pressure more than 5 Ã 10â3 Pa. The band-gap slightly shrinks with Sn4+ ions incorporated into Ga3+ sites, showing an excellent solar-blind ultraviolet (UV) characteristic. The conductivity of hexagonal É-Ga1.8Sn0.2O3 films is very low in the dark, and permitting the design and fabrication of solar-blind photodetector. The photodetector exhibits obvious photo-response under 254 nm UV light irradiation, and it increases in photocurrent with both the rise of applied bias and optical input power. The results suggest that É-Ga1.8Sn0.2O3 thin film is a promising candidate for using in solar-blind photodetectors.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Xiaolong Zhao, Yusong Zhi, Wei Cui, Daoyou Guo, Zhenping Wu, Peigang Li, Linghong Li, Weihua Tang,