Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5443635 | Scripta Materialia | 2017 | 4 Pages |
Abstract
A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200-500 °C. The embedded NCs have a concentration of about 5.4 Ã 1010 cmâ 2, a mean height of 8.6 nm and a mean lateral dimension of 19.2 nm. A stress induced inside the NCs owing to lattice mismatch between Si and GaSb was fully relaxed by edge dislocations at Si/GaSb interface. All the NCs have identical epitaxial relationship: GaSb(111)||Si(111), GaSb11â0 ||Si11â0.
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Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
E.A. Chusovitin, D.L. Goroshko, S.A. Dotsenko, S.V. Chusovitina, A.V. Shevlyagin, N.G. Galkin, A.K. Gutakovskii,