Oxygen-related defects in n-type Czochralski silicon wafers studied by hyperspectral photoluminescence imaging

Oxygen-related Thermal Donors in n-type Czochralski silicon (Cz-Si) wafers have been investigated using hyperspectral photoluminescence imaging and OxyMap. Thermal Donors give rise to two photoluminescence emissions, one narrow peak at 0.767 eV, and one broad band with centre peak at 0.72 eV that is also measurable at room temperature. The spectral imaging was first carried out on the sample cooled to 90 K, then repeated at room temperature (300 K). The possibility to delimitate at room temperature defects-rich zones with hyperspectral photoluminescence imaging is evidenced.