Theoretical study of Charge Transfer simulation At Fe Metal with Ge and ZnO semiconductors Nano devices material

Focuses of ours paper is on the describing and investigation of the simulation of charge transition at Fe metal with Ge and ZnO semiconductors at electronic Nano devices system. Theoretical treatment of Fe / Ge and Fe/ZnOdevices system taken account to be continuum energy levels for two solid state material.Quantum theory had been used to describe the interface between two system Nano devices Fe / Ge or ZnOtechnology largely applied on the Metal/Semiconductor field system, whose many coefficient should be effected on the quantum transfer of charge due to the interface such that:transition energy Δmet/sem, work function σmet, electronic negatively of semiconductor σsem, coupling transition coefficient 〈|CT(0)¯|2〉, concentration of electron nin, volume of unit cell for semiconductor Vsem, penetration factor γ, and temperature T(K). The quantum charge transfer simulation could be able to selection the most devices that suitable used in nanotechnology applied and science studied. Flow charge current of charge transfer βCT has been estimated due to Δmet/sem using a MATLAP program. Theoretical data show that flow charge current is more probable with decreasing the Δmet/sem and increasing the 〈|CT(0)¯|2〉. Data of flow charge current results of transition are increases with decreasing potential at interface, this indicate, increasing potential forbidden more electrons to cross the tunneling at interface at the metal/semiconductor system and vice versa.