Study of Physical and Optoelectronic Properties of CuInSe2/Si Heterojunction Solar Cells

CuInSe2 (CIS) solar cell has been prepared by use vacuum thermal evaporation technique, with different thickness on (n-type) single crystal silicon substrate with orientation (111), the sample is annealed in the thermal range (400-600) K. The (C-V) measurements indicate that the heterojunction of abrupt type, the capacitance decreases with increasing thickness and annealing temperature, while there is increasing in charge carriers concentration. The (I-V) characterization under illumination found to improve in efficiency of a solar cell with thickness and annealing temperature, the solar cell which have an optimal condition (t=750±20) NM, Ta=600K have higher efficiency among other cells (η =5. 6). A short circuit current density (Jsc) of (30mA/ cm2), open circuit voltage (Voc) of (0.5Volt).