Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5446615 | Energy Procedia | 2016 | 9 Pages |
Abstract
Previous studies of thermal oxidation on a doped structure showed that growth of thermal SiO2 depends on the charge carrier concentration. Here we show that growth behavior of a thermal SiO2 layer also depends strongly on the emitter's electrically non-active P concentration. Experimental data show that an increase in P precipitate concentration has a significant influence on the growth kinetics of thermally grown SiO2 layers. Despite constant charge carrier concentration in the emitter, an increase in growth rate up to a factor of 2 was measured in samples with increased inactive P concentration. Quantitative elemental analysis of the thermally grown SiO2 layers further shows that the SiO2 composition can be strongly influenced by the Si substrate's inactive P concentration.
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Physical Sciences and Engineering
Energy
Energy (General)
Authors
Amir Dastgheib-Shirazi, Johannes Rinder, Gabriel Micard, Michael Steyer, Giso Hahn, Barbara Terheiden,