| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 5446616 | Energy Procedia | 2016 | 8 Pages | 
Abstract
												Here we report on the impact of annealing and oxidation processes for silicon solar cells performed at low temperatures, in terms of how recombination properties at the surface and within the emitter are modified. Results from this experiment show that bulk gettering of interstitial iron impurities is also enhanced from these thermal treatments. The addition of the low temperature processes also improves the internal quantum efficiency at the short wavelengths.
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											Authors
												Hongzhao Li, Malcolm Abbott, Brett Hallam, Stuart Wenham, 
											