Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5446647 | Energy Procedia | 2016 | 5 Pages |
Abstract
The use of plasma immersion ion implantation (PIII) is a relevant approach for the development of advanced solar cells technologies at lower cost (â¬/Wp). In this paper, we report on the development of homogeneous boron (B) doping of n-type crystalline silicon (cSi) substrate by the PIII technique. Using diborane (B2H6) as gas precursor, various doping profiles were identified fitting the requirements for boron-doped emitters in n-type PERT solar cells. Particularly, saturation current density (J0e) of 50 fA/cm2 were achieved on symmetrical samples for a 94 Ω/sg textured B-emitter passivated with SiO2/SiN stack. Bifacial n-type Passivated Emitter Rear Totally-diffused (n-PERT) solar cells were fabricated using the PIII technology and conversion efficiencies up to 19.8% on 239 cm2 Cz-Si wafers were obtained. As a consequence, these results indicate that PIII can compete with beamline technology but will have lower running cost. It is therefore a promising technology to create high efficiency cSi solar cells.
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Physical Sciences and Engineering
Energy
Energy (General)
Authors
Jean-François Lerat, Thibaut Desrues, Jérôme Le Perchec, Marianne Coig, Frederic Milesi, Frédéric Mazen, Thomas Michel, Laurent Roux, Yannick Veschetti, Sébastien Dubois,