Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5447177 | Journal of Materiomics | 2016 | 14 Pages |
Abstract
A peak figure of merit, zT of â¼0.2Â at 700Â K is achieved in Ag0.01Ge0.79Sn0.2Se, a composition with the highest carrier concentration, through a combination method of doping and alloying. The transport properties can be well described by a single parabolic band model which further enables a prediction on the maximal zT of â¼0.6 at 700Â K and the corresponding carrier concentration of â¼5Â ÃÂ 1019Â cmâ3, indicating that GeSe shows a potentially high thermoelectric figure of merit but requires a much higher carrier concentration.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Xinyue Zhang, Jiawen Shen, Siqi Lin, Juan Li, Zhiwei Chen, Wen Li, Yanzhong Pei,