Impurity states and the diamagnetic susceptibility of a donor in a GaAs/AlxGa1-xAs Triangular Quantum Well under hydrostatic pressure

We study the effect of Γ-X band crossover due to the application of hydrostatic pressure of a hydrogenic donor confined in a Triangular GaAs/Al1-xGaxAs Quantum Well (TQW) for x = 0.3 and the diamagnetic susceptibility (χdia) for such an impurity in 1s and some few low lying excited states have been investigated. The Schrodinger equation has been solved using variational technique in the effective mass approximation. The results show that the diamagnetic susceptibility (χdia) of a hydrogenic donor abruptly increases at a particular pressure for 1s and 2p± states but a steady increase for 2s state as a function of applied pressure.