Role of YSZ buffer layer and PbTiO3 seed layer in the crystallization of PZT on SiO2/Si substrate

PZT/PT/YSZ multilayer thin film is deposited on SiO2/Si substrate by sol gel technique. YSZ and PbTiO3 are subsequently used as the buffer layer and seed layer for the growth of PZT films on SiO2/Si substrate. X-ray diffraction studies and morphological studies analyses the roles played by YSZ and PbTiO3 layers in the formation of single phase perovskite structured PZT thin films. FESEM micrographs showed how the YSZ layer acts as a barricade for controlling the Pb diffusion in SiO2 layer. The importance of PbTiO3 layer as seed layers for the crystallization of perovskite PZT is discussed. The study of the electrical and ferroelectric properties of these films showed that the introduction of YSZ insulating layer under the PZT layer causes reduction in the values of Pr and dielectric constant. The pure perovskite phase PZT/PT/ YSZ film have a high value of Pr=17 μC/cm2 and resistivity=1.5×1011 Ω-cm. The present paper analyses the importance of the YSZ buffer layer and PbTiO3 seed layer for the growth of single phase perovskite structured PZT thin films on SiO2/Si substrate.