Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5449114 | Optics Communications | 2017 | 6 Pages |
Abstract
In semiconductor lasers design, asymmetric structure can be used to improve laser characteristics. In this paper we proposed asymmetric AlGaInAs/AlGaAs structure for 808Â nm laser diode to increase the n-cladding layer effect in beam propagation. In our proposed design, the active layer position in waveguide region was optimized for obtaining maximum optical power and minimum threshold current. The results show that the active layer position in waveguide related linearly to the asymmetric parameter. The results also show that in compare with usual structure, our proposed asymmetric structure can enhance the optical fiber coupling efficiency.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Seyed Peyman Abbasi, Mohammad Hossein Mahdieh,